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On the growth mode of oxide films on cleaved GaAs(110) surfaces at room temperature

✍ Scribed by F. Bartels; W. Mönch


Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
277 KB
Volume
57
Category
Article
ISSN
0038-1098

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The growth of thin Ti Ðlms on Al(001), Al(110) and Al(111) surfaces at room temperature has been studied using high-energy Rutherford backscattering spectroscopy (RBS) and channeling, x-ray photoelectron spectroscopy (XPS) and low-energy electron di †raction (LEED). Our results show that Ti atoms fo