Bismuth on GaAs(110): Characterisation of growth mode and Schottky barrier formation at low and room temperature

✍ Scribed by N. Esser; M. Hünermann; U. Resch; D. Spaltmann; J. Geurts; D.R.T. Zahn; W. Richter; R.H. Williams

• Publisher: Elsevier Science
• Year: 1990
• Tongue: English
• Weight: 429 KB
• Volume: 41-42
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/0169-4332(89)90051-2