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On the Formation of Swirl Defects in Silicon and Germanium

✍ Scribed by Tognato, R.


Publisher
John Wiley and Sons
Year
1986
Tongue
English
Weight
186 KB
Volume
98
Category
Article
ISSN
0031-8965

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## Abstract The behaviours of germanium doped in Czochralski (CZ) silicon have attracted considerable attention in recent years. In this article, a review concerning recent processes in the study about oxygen related defects in germanium‐doped CZ (GCZ) silicon is presented. The formation of oxygen