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On the formation of stacking faults in silicon implanted with high doses of oxygen

✍ Scribed by Ph. Komninou; Th. Karakostas; J. Stoemenos; C. Jaussaud; J. Margail

Publisher: Springer
Year: 1987
Tongue: English
Weight: 601 KB
Volume: 22
Category: Article
ISSN: 0022-2461
DOI: 10.1007/bf01082139

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