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On the electrical properties of Si-doped InGaP layers grown by low pressure‐metalorganic vapor phase epitaxy

✍ Scribed by Roberto Jakomin; Antonella Parisini; Luciano Tarricone; Massimo Longo; Beatrice Fraboni; Salvatore Vantaggio

Book ID
116943650
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
875 KB
Volume
520
Category
Article
ISSN
0040-6090

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Electrical properties of N atomic layer
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✍ Youngcheon Jeong; Masao Sakuraba; Junichi Murota 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 304 KB

Sheet carrier concentration and Hall mobility of the N atomic layer doped Si epitaxial films on Si(1 0 0) were obtained by Hall effect measurement. It is found that the N atoms act as a donor. Donor activation ratio tends to decrease with increasing N amount, and the typical ratio is about 0.4% at t