On the doping of graphene
โ Scribed by Jones, R. ;Eberlein, T. A. G. ;Briddon, P. R.
- Publisher
- John Wiley and Sons
- Year
- 2008
- Tongue
- English
- Weight
- 400 KB
- Volume
- 205
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
โฆ Synopsis
Abstract
Density functional theory is used to show that charge transfer occurs between chemical dopants in GaAs and adsorbates composed of C~60~ and graphene lying on the (110) surface of GaAs. In the case of C~60~, charge transfer only occurs for nโtype GaAs in agreement with previous experimental results. However, the calculations show that transfer between graphene and both nโ and pโtype GaAs can occur which offers a simple way of doping graphene. (ยฉ 2008 WILEYโVCH Verlag GmbH & Co. KGaA, Weinheim)
๐ SIMILAR VOLUMES
## Abstract Graphene grown on silicon carbide (SiC) is a promising material for high speed electronic devices. However, for possible future applications it is important to understand the electron properties of this material and how it is affected by the interaction with the SiC interface. Here we r
The electronic structures of a lithium ion (Li + ) doped-graphene at the ground and low-lying excited states have been investigated by means of density functional theory (DFT) method. A graphene composed of 19 benzene rings was used as a model of graphene, while the edge carbon atom was terminated b
## Abstract We distinguish three mechanisms of doping graphene. Density functional theory is used to show that electronegative molecules like tetrafluoroโtetracyanoquinodimethane (F4โTCNQ) and electropositive metals like K dope graphene pโ and nโ type, respectively. These dopants are expected to le