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On the Determination of Charge Profiles in Epitaxial Layers of ZnSe by Capacitance Measurements

✍ Scribed by M. Germain; R. Evrard; S. Lampe; M. Heuken


Book ID
107457773
Publisher
Springer US
Year
1998
Tongue
English
Weight
102 KB
Volume
27
Category
Article
ISSN
0361-5235

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For IR thickness measurements of very thin silicon epitaxial layers (dep, < 3 pm) on silicon substrate the influence of the concentration profile of free carriers in the whole system is not negligible. The effects of most important profile parameters on the IR reflectance spectrum of silicon epitaxi