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On the characterisation of grown-in defects in Czochralski-grown Si and Ge

✍ Scribed by J. Vanhellemont; J. Van Steenbergen; F. Holsteyns; P. Roussel; M. Meuris; K. Młynarczyk; P. Śpiewak; W. Geens; I. Romandic

No coin nor oath required. For personal study only.

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