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On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs)

✍ Scribed by Tzu-Pin Chen; Chi-Jhung Lee; Wen-Shiung Lour; Der-Feng Guo; Jung-Hui Tsai; Wen-Chau Liu

Book ID
108271714
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
344 KB
Volume
53
Category
Article
ISSN
0038-1101

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This work describes an approach for small signal modelling of GaAs-based ( ) ( heterojunction bipolar transistors HBTs for low-voltage r r r r r high-power application i.e., 4 2 ) V s 3 V, J s 3 = 10 A r r r r r cm . The parameter extraction procedure is discussed in ce c detail. Furthermore, it is