On the base region in very small geometry, bipolar transistors

✍ Scribed by E.H. Stevens

• Publisher: Elsevier Science
• Year: 1984
• Tongue: English
• Weight: 900 KB
• Volume: 15
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/s0026-2692(84)80128-7

✦ Synopsis

Relationships between base region properties and

the performance of very small geometry, bipolar transistors are discussed. It is shown that simultaneously obtaining high current gain, low sensitivity to ionic charge, and fast switching from logic gates requires a compromise in designing the transistor base region. Experimental results from transistors with an active area of only 8Fro 2 are presented. The results demonstrate that a d.c. current gain of 70, a tolerance of surface region ions to concentrations as large as 8 • 10" sin-z, and a logic gate delay of 0.18 S can be obtained.