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On the Band Structure of Ultrathin Layer Semiconductor Superlattices

โœ Scribed by N. A. Gushchina; V. K. Nikulin; Yu. N. Tzarev


Publisher
John Wiley and Sons
Year
1989
Tongue
English
Weight
303 KB
Volume
153
Category
Article
ISSN
0370-1972

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We have used the recursion method to calculate bulk and surface electronic structures of a (GaP)l/(InP)l (111) strained-layer superlattice. The obtained energy gap for the stable superlattice is 1.88eV. which is smaller by 0.31eV than the average of the gaps of bulk GaP(2.9leV) and InP(1.48eV). We s