Epitaxial ZnO thin ΓΏlms co-doped with 3d transition metal (TM) (TM = Cr, Mn, Fe, Co, Ni and Cu) and 1 mol% Al were fabricated as a series of oxide-diluted magnetic semiconductors by pulsed-laser-deposition method. Magnetoresistance (MR) of the ΓΏlms was measured to investigate the s-d exchange intera
β¦ LIBER β¦
On the 2D-3D transition in epitaxial thin film growth
β Scribed by S. Stoyanov; I. Markov
- Publisher
- Elsevier Science
- Year
- 1982
- Weight
- 57 KB
- Volume
- 116
- Category
- Article
- ISSN
- 0167-2584
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