Epitaxial ZnO thin ΓΏlms co-doped with 3d transition metal (TM) (TM = Cr, Mn, Fe, Co, Ni and Cu) and 1 mol% Al were fabricated as a series of oxide-diluted magnetic semiconductors by pulsed-laser-deposition method. Magnetoresistance (MR) of the ΓΏlms was measured to investigate the s-d exchange intera
Magnetoresistance of 3d transition metal single-doped and co-doped epitaxial ZnO thin films
β Scribed by Gen-Hua Ji; Zheng-Bin Gu; Ming-Hui Lu; Di Wu; Shan-Tao Zhang; Yong-Yuan Zhu; Shi-Ning Zhu; Yan-Feng Chen; X.Q. Pan
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 288 KB
- Volume
- 404
- Category
- Article
- ISSN
- 0921-4526
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