A new statistical nonlinear model of GaAs FET MMICs which allows the representation of distance-dependent technological parameter variations by means of equivalent circuit parameters, and an automatic extraction procedure, are presented. The capability to reproduce statistical distribution has been
On properties of circuit for circuit evaluation as a parallelization procedure
β Scribed by Katsuhiro Seino; Ken Tanaka
- Publisher
- John Wiley and Sons
- Year
- 2007
- Tongue
- English
- Weight
- 222 KB
- Volume
- 162
- Category
- Article
- ISSN
- 0424-7760
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