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On low frequency and 1/f noise from diffusion like processes

✍ Scribed by I. Lundström; D. McQueen; C. Klason


Publisher
Elsevier Science
Year
1973
Tongue
English
Weight
300 KB
Volume
13
Category
Article
ISSN
0038-1098

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Low 1/f Noise in AlGaN/GaN HFETs on SiC
✍ Rumyantsev, S. ;Levinshtein, M. E. ;Gaska, R. ;Shur, M. S. ;Khan, A. ;Yang, J. W 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 139 KB 👁 2 views

Experimental results of the low-frequency noise measurements on a large number of different AlGaN/GaN High Electron Mobility Transistors (HEMTs) grown on sapphire and SiC substrates have been presented. In the HEMTs grown on sapphire, the 1af noise is an order of magnitude (or more) higher than for