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On a mathematical model for hot carrier injection in semiconductors

✍ Scribed by Naoufel Ben Abdallah; Pierre Degond; Christian Schmeiser


Publisher
John Wiley and Sons
Year
1994
Tongue
English
Weight
708 KB
Volume
17
Category
Article
ISSN
0170-4214

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✦ Synopsis


Abstract

We study a collisionless transport model for electrons in a semiconductor, and we perform an asymptotic analysis for low temperatures or large applied biases. We derive analytic relations for the built‐in potential and for the current which flows through the structure.


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