The one-dimensional stationary full hydrodynamic model for semiconductor devices with non-isentropic pressure is studied. This model consists of the equations for the electron density, electron temperature, and electric field in a bounded domain supplemented with boundary conditions. The existence o
Weak solutions to a one-dimensional hydrodynamic model of two carrier types for semiconductors
β Scribed by Weifu Fang; Kazufumi Ito
- Publisher
- Elsevier Science
- Year
- 1997
- Tongue
- English
- Weight
- 982 KB
- Volume
- 28
- Category
- Article
- ISSN
- 0362-546X
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Steady-state BV solutions to a one-dimensional hydrodynamic model for semiconductors are shown to exist as limits of viscous solutions as the viscosity vanishes. 1997 Academic Press ## 1. Introduction Recently the hydrodynamic model for semiconductors has received increasing attention. The model
## Abstract We establish the global existence of smooth solutions to the Cauchy problem for the multiβdimensional hydrodynamic model for semiconductors, provided that the initial data are perturbations of a given stationary solutions, and prove that the resulting evolutionary solution converges asy
A self-consistent numerical transport model based on the hydrodynamic equations obtained from Boltzmann's transport equation (BTE) is presented. The model includes both the temporal and spatial variation in electron velocity. A parallel implementation of the solution method, using FDTD techniques, i