Steady-State Solutions of a One-Dimensional Hydrodynamic Model for Semiconductors

✍ Scribed by Weifu Fang; Kazufumi Ito

• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 543 KB
• Volume: 133
• Category: Article
• ISSN: 0022-0396
• DOI: 10.1006/jdeq.1996.3203

✦ Synopsis

Steady-state BV solutions to a one-dimensional hydrodynamic model for semiconductors are shown to exist as limits of viscous solutions as the viscosity vanishes.

1997 Academic Press

1. Introduction

Recently the hydrodynamic model for semiconductors has received increasing attention. The model is derived from the Boltzmann equation by taking the first three moments with proper closures, and consists of a set of Euler equations with certain source terms and a Poisson's equation for the electric potential (see, e.g., [1,11,12] for derivation). It is known that this model is an improvement upon the classical drift-diffusion model. Because of the complexity of the full model, a simplified model was first derived in [3] and has been analyzed by many authors since; see [4 8, 10, 15]. In this model the equation of energy conservation is eliminated by assuming a pressure density relation. For details and discussions about this and other models, we refer to [1,3,11,12]. After proper normalization, article no.