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A model for hot-electron and hot-hole injection in flash EEPROM programming

✍ Scribed by A. Concannon; A. Mathewson; F. Piccinini; G.L. Mei; R. Bez; C. Lombardi

Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
324 KB
Volume
25
Category
Article
ISSN
0026-2692

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## Abstract We study a collisionless transport model for electrons in a semiconductor, and we perform an asymptotic analysis for low temperatures or large applied biases. We derive analytic relations for the built‐in potential and for the current which flows through the structure.