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Ohmic contact for p-type diamond without postannealing

✍ Scribed by Teraji, T.; Koizumi, S.; Koide, Y.


Book ID
120230366
Publisher
American Institute of Physics
Year
2008
Tongue
English
Weight
428 KB
Volume
104
Category
Article
ISSN
0021-8979

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The open-tube diffusion of zinc is used for the preparation of p-type layers in gallium arsenide. The process provides the capability of forming reproducible deep diffusions (0.4-2 l~m) over short diffusion times and in the temperature range 600-650 ~ TiPdAu contacts are prepared on these layers. Us