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ODMR of impurity centers embedded in silicon microcavities

✍ Scribed by Nikolay T. Bagraev; Wolfgang Gehlhoff; Leonid E. Klyachkin; Anna M. Malyarenko; Vladimir A. Mashkov; Vladimir V. Romanov; Tatiana N. Shelykh


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
193 KB
Volume
40
Category
Article
ISSN
1386-9477

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✦ Synopsis


We present the findings of high efficient light absorption in self-assembled quantum wells (SQW) incorporated in silicon microcavities that exhibit a distributed feedback identified by the FIR transmission spectra. The excitonic normal-mode coupling (NMC) is found to result in high efficient bound exciton photoluminescence in the range of the Rabi splitting. The bound excitons at the iron-boron pair and the erbium-related centers inserted in SQW are shown to cause giant exchange splitting of the center multiplets as a result of the strong sp-d and sp-f mixing in the absence of the external magnetic field. The NMC regime is observed to reveal this exchange splitting in the angular dependencies of the transmission spectra measured in the range of the Rabi splitting that are evidence of the ODMR of the trigonal iron-boron pairs and trigonal erbium-related centers.


πŸ“œ SIMILAR VOLUMES


Erbium-related centres embedded in silic
✍ N.T. Bagraev; A.D. Bouravleuv; W. Gehlhoff; L.E. Klyachkin; A.M. Malyarenko; V.V πŸ“‚ Article πŸ“… 2003 πŸ› Elsevier Science 🌐 English βš– 357 KB

We present the findings of high efficient Er 3+ -related 4 I 13/2 " 4 I 15/2 absorption under excitonic normal-mode coupling (NMC) with the self-assembled quantum well embedded in silicon microcavity. The microcavities of this art are prepared by the short-time diffusion of boron into the Si(1 0 0)

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We present the ΓΏndings of high-e cient Er 3+ -related 4 I 13=2 ↔ 4 I 15=2 absorption and emission from self-assembled quantum wells (SQW) embedded in silicon microcavities. The microcavities are prepared by the short-time di usion of boron into the Si(1 0 0) wafer doped with erbium. The intraband el