Light emission from erbium-doped nanostructures embedded in silicon microcavities

✍ Scribed by N.T Bagraev; A.D Bouravleuv; W Gehlhoff; L.E Klyachkin; A.M Malyarenko; M.M Mezdrogina; V.V Romanov; A.P Skvortsov

• Publisher: Elsevier Science
• Year: 2002
• Tongue: English
• Weight: 211 KB
• Volume: 13
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/s1386-9477(02)00302-8

✦ Synopsis

We present the ÿndings of high-e cient Er 3+ -related 4 I 13=2 ↔ 4 I 15=2 absorption and emission from self-assembled quantum wells (SQW) embedded in silicon microcavities. The microcavities are prepared by the short-time di usion of boron into the Si(1 0 0) wafer doped with erbium. The intraband electron transitions accompanied by tunneling through strongly coupled SQW series are observed to excite the 4 I 13=2 ↔ 4 I 15=2 Er 3+ -intracenter emission, 1:54 m, that is enhanced by strong sp-f mixing in the range of the Rabi splitting revealed by the transmission spectra.