Inclusion of tunneling and ballistic tra
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T. Conklin; S. Naugle; S. Shi; S.M. Frimel; K.P. Roenker; T. Kumar; M.M. Cahay;
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Article
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1995
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Elsevier Science
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English
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We describe an analytical approach to modeling NPN InP-based heterojunction bipolar transistors using a Gummel Poon model. Starting from an initial, physical description of the device's epitaxial structure and geometry, this physics-based model is utilized to simulate the device's operation using a