๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Observation of the resonant-tunnelling effect and temperature-dependent characteristics of an InP/InGaAs heterojunction bipolar transistor

โœ Scribed by Wang, Wei-Chou; Pan, Hsi-Jen; Thei, Kong-Beng; Lin, Kun-Wei; Yu, Kuo-Hui; Cheng, Chin-Chuan; Laih, Lih-Wen; Cheng, Shiou-Ying; Liu, Wen-Chau


Book ID
125534386
Publisher
Institute of Physics
Year
2000
Tongue
English
Weight
162 KB
Volume
15
Category
Article
ISSN
0268-1242

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Inclusion of tunneling and ballistic tra
โœ T. Conklin; S. Naugle; S. Shi; S.M. Frimel; K.P. Roenker; T. Kumar; M.M. Cahay; ๐Ÿ“‚ Article ๐Ÿ“… 1995 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 366 KB

We describe an analytical approach to modeling NPN InP-based heterojunction bipolar transistors using a Gummel Poon model. Starting from an initial, physical description of the device's epitaxial structure and geometry, this physics-based model is utilized to simulate the device's operation using a