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Observation of long-lived excitons in InAs quantum dots under thermal redistribution temperature

✍ Scribed by Chun Cheng; Sheng-Di Lin; Chien-Hung Pan; Chien-Hung Lin; Ying-Jhe Fu


Book ID
113851992
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
510 KB
Volume
376
Category
Article
ISSN
0375-9601

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Thermal activation and thermal transfer
✍ Z.Y. Xu; Z.D. Lu; Z.L. Yuan; X.P. Yang; B.Z. Zheng; J.Z. Xu; W.K. Ge; Y. Wang; J πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 112 KB

We have investigated the temperature dependence of photoluminescence (PL) properties of a number of InAs/GaAs heterostructures with InAs layer thickness ranging from 0.5 monolayer (ML) to 3 ML. The temperature dependence of the InAs exciton energy and linewidth was found to display a significant dif