✦ LIBER ✦

Observation of long-lived oblique excitons in GaN-AlGaN multiple quantum wells

✍ Scribed by Gil, B.; Lefebvre, P.; Allègre, J.; Mathieu, H.; Grandjean, N.; Leroux, M.; Massies, J.; Bigenwald, P.; Christol, P.

Book ID: 125960492
Publisher: The American Physical Society
Year: 1999
Tongue: English
Weight: 124 KB
Volume: 59
Category: Article
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.59.10246

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Exciton-phonon interaction in InGaN/GaN

Exciton-phonon interaction in InGaN/GaN and GaN/AlGaN multiple quantum wells

✍ Smith, M.; Lin, J. Y.; Jiang, H. X.; Khan, A.; Chen, Q.; Salvador, A.; Botchkare 📂 Article 📅 1997 🏛 American Institute of Physics 🌐 English ⚖ 443 KB

Investigation of excitons in AlGaN/GaN m

Investigation of excitons in AlGaN/GaN multiple quantum wells by lateral photocurrent and photoluminescence spectroscopies

✍ Friel, I. 📂 Article 📅 2004 🏛 American Institute of Physics 🌐 English ⚖ 396 KB

Electric-field-induced impact ionization

Electric-field-induced impact ionization of excitons in GaN and GaN/AlGaN quantum wells

✍ D. K. Nelson; M. A. Yacobson; V. D. Kagan; B. Gil; N. Grandjean; B. Beaumont; J. 📂 Article 📅 2001 🏛 SP MAIK Nauka/Interperiodica 🌐 English ⚖ 256 KB

Luminescence of Localised Excitons in In

Luminescence of Localised Excitons in InGaN/GaN Multiple Quantum Wells

✍ S. Miasojedovas; S. Juršėnas; G. Kurilčik; A. Žukauskas; Shih-Wei Feng; C.C. Yan 📂 Article 📅 2003 🏛 John Wiley and Sons 🌐 English ⚖ 181 KB

Structure Dependence of Electron Mobilit

Structure Dependence of Electron Mobility in GaN/AlGaN Multiple Quantum Wells

✍ Hoshino, K. ;Someya, T. ;Arakawa, Y. 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 95 KB 👁 2 views

We have investigated electron Hall mobility of high-quality GaN/AlGaN multiple quantum wells (QWs). Electron mobility was enhanced from 875 to 1600 cm 2 /Vs at room temperature in GaN/Al 0.58 Ga 0.42 N QWs when the number of QWs increased from 1 to 10. Atomic force microscopy analysis shows that the

Properties of Quantum Well Excitons in G

Properties of Quantum Well Excitons in GaN/AlGaN and InGaN/GaN/AlGaN UV, Blue, Green, and Amber Light Emitting Diode Structures

✍ Chichibu, S. F. ;Deguchi, T. ;Sota, T. ;Wada, K. ;DenBaars, S. P. ;Mukai, T. ;Na 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 195 KB 👁 2 views

Optical spectra of GaN, In-doped GaN, and InGaN single quantum well (SQW) structures were compared to explore the role of In for the emission mechanisms in the SQW light emitting diodes (LEDs). The internal electric field, F, due to spontaneous and piezoelectric polarization in strained quantum well