Observation of the spectral dependence of the spatial photocarrier redistribution in InAs/GaAs quantum dots
β Scribed by F.V. de Sales; S.W. da Silva; J.M.R. Cruz; M.A.G. Soler; P.C. Morais; M.J. da Silva; A.A. Quivy; J.R. Leite
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 81 KB
- Volume
- 17
- Category
- Article
- ISSN
- 1386-9477
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π SIMILAR VOLUMES
InAs quantum dots (QDs) on GaAs (0 0 1) substrates were grown by Molecular Beam Epitaxy (MBE) using two growth temperatures. Photoluminescence (PL) pump power dependence measurements at low temperature were carried out for sample grown at higher temperature (520 8C). With increasing excitation densi
We present measurements of the optical dipole of interband transitions in InAs=GaAs quantum dots. Both the transmission in guided-wave geometry and the in-plane polarization dependence of the photoluminescence are analyzed. The relative oscillator strength and polarization of up to four optical tran