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Observation of behavior of Ge δ-doped layer in Si(001)

✍ Scribed by Takashi Fuse; Kiyoshi Kawamoto; Takashi Shiizaki; Eisuke Tazou; Mitsuhiro Katayama; Kenjiro Oura

Book ID
114169723
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
478 KB
Volume
136-138
Category
Article
ISSN
0168-583X

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Detailed characterization of extremely thin buried Ge films of monolayer thickness (6 layers) was performed by combination of grazing incidence X-ray reflectivity, crystal truncation rods, and X-ray standing waves. Grazing incidence reflectivity and crystal truncation rods are used to determine the