✦ LIBER ✦

Numerical Study of the Turnoff Behavior of High-Voltage 4H-SiC IGBTs

✍ Scribed by Tamaki, T.; Walden, G.G.; Yang Sui; Cooper, J.A.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Design and Characterization of High-Volt

✍ Qingchun Zhang; Jun Wang; Jonas, C.; Callanan, R.; Sumakeris, J.J.; Sei-Hyung Ry 📂 Article 📅 2008 🏛 IEEE 🌐 English ⚖ 407 KB

Evaluation of high-voltage 4H-SiC switch

✍ Jue Wang; Williams, B.W. 📂 Article 📅 1999 🏛 IEEE 🌐 English ⚖ 203 KB

Design criteria of high-Voltage lateral

✍ Kuang Sheng; Shuntao Hu 📂 Article 📅 2005 🏛 IEEE 🌐 English ⚖ 566 KB

Experimental characterization of a 4H–Si

✍ F. Nallet; D. Planson; P. Godignon; M.L. Locatelli; M. Lazar; J.P. Chante 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 155 KB

Study of 6H–SiC high voltage bipolar dio

✍ K. Isoird; M. Lazar; L. Ottaviani; M.L. Locatelli; C. Raynaud; D. Planson; J.P. 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 485 KB

High-Voltage 4H-SiC Bipolar Junction Tra

✍ Sharma, S.; Li, C.; Bhat, I.B.; Chow, T.P. 📂 Article 📅 2008 🏛 IEEE 🌐 English ⚖ 794 KB