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Design and Characterization of High-Voltage 4H-SiC p-IGBTs

✍ Scribed by Qingchun Zhang; Jun Wang; Jonas, C.; Callanan, R.; Sumakeris, J.J.; Sei-Hyung Ryu; Das, M.; Agarwal, A.; Palmour, J.; Huang, A.Q.

No coin nor oath required. For personal study only.

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