High-Voltage 4H-SiC Bipolar Junction Transistors With Epitaxial Regrowth of the Base Contact

✍ Scribed by Sharma, S.; Li, C.; Bhat, I.B.; Chow, T.P.

• Book ID: 114619245
• Publisher: IEEE
• Year: 2008
• Tongue: English
• Weight: 794 KB
• Volume: 55
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2008.2006920