Numerical study of electrostatic properties of metal/semi-insulating GaAs contacts
✍ Scribed by T.P. Chen; Y.C. Liu; S. Fung; C.D. Beling
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 386 KB
- Volume
- 94
- Category
- Article
- ISSN
- 0038-1098
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
Cross-check Measurement of Electrical Properties of Semi-insulating GaAs ## SI GaAs is widely applied for many fields such as cellular phones, fibre communication systems, satellite broadcasting tuners. The SI property is necessary for high performance. The electrical properties of semi-insulating
In the present work, a comparative study of semi-insulating (SI) GaAs radiation detectors with different blocking (Schottky) and ohmic contact metallization is presented. The detectors fabricated from ''detector-grade'' bulk SI GaAs are characterized by current-voltage measurements and their detecti
The size-selective laser-induced etching of semi-insulating GaAs /10 0S is carried out to create a porous structure by varying the laser beam exposure time. The etch-time dependent photoluminescence (PL) spectroscopy results show that a direct tuning of the size of the nanocrystallites has a limit a