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Numerical simulations of a new approach for seeing measurement

✍ Scribed by Habib, A.; Benkhaldoun, Z.; El Azhari, Y.

Book ID
121343171
Publisher
John Wiley and Sons
Year
2013
Tongue
English
Weight
847 KB
Volume
434
Category
Article
ISSN
0035-8711

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πŸ“œ SIMILAR VOLUMES

A new approach for numerical simulation
A new approach for numerical simulation of quantum transport in double-gate SOI
✍ Tarek M. Abdolkader πŸ“‚ Article πŸ“… 2007 πŸ› John Wiley and Sons 🌐 English βš– 359 KB

## Abstract Numerical simulation of nanoscale double‐gate SOI (Silicon‐on‐Insulator) greatly depends on the accurate representation of quantum mechanical effects. These effects include, mainly, the quantum confinement of carriers by gate‐oxides in the direction normal to the interfaces, and the qua