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Numerical simulation for fine-blanking—a new approach

✍ Scribed by L.C. Chan; Y.C. Leung; T.C. Lee; J.P. Fan; C.Y. Tang

Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
450 KB
Volume
364
Category
Article
ISSN
0921-5093

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## Abstract Numerical simulation of nanoscale double‐gate SOI (Silicon‐on‐Insulator) greatly depends on the accurate representation of quantum mechanical effects. These effects include, mainly, the quantum confinement of carriers by gate‐oxides in the direction normal to the interfaces, and the qua