Numerical simulation of the crystallization front inversion in oxide single crystals grown from melt using the Czochralski method
โ Scribed by V. M. Mamedov; V. S. Yuferev
- Book ID
- 111450104
- Publisher
- SP MAIK Nauka/Interperiodica
- Year
- 2008
- Tongue
- English
- Weight
- 194 KB
- Volume
- 34
- Category
- Article
- ISSN
- 1063-7850
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๐ SIMILAR VOLUMES
Oscillatory flow present in the melt during InSb single crystal growth using an RF-heating Czochralski method has been numerically investigated by means of the finite difference method using the HSMAC algorithm. The thermal boundary conditions required for the numerical simulation model were obtaine
Thermal conditions and rotation rate were examined experimentally for obtaining a flat interface growth of high melting-point oxide (Tb 3 Sc x Al 5-x O 12 -TSAG) by the Czochralski method. The critical crystal rotation rate can be significantly reduced, of about twice at low and very low temperature