Numerical optimization of czochralski sapphire single crystal growth using orthogonal design method
β Scribed by Fang, H. S.; Tian, J.; Wang, S.; Long, Y.; Zhang, M. J.; Zhao, C. J.
- Book ID
- 121876867
- Publisher
- John Wiley and Sons
- Year
- 2014
- Tongue
- English
- Weight
- 951 KB
- Volume
- 49
- Category
- Article
- ISSN
- 0232-1300
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π SIMILAR VOLUMES
The optimization of the crystal surface temperature distribution is performed for single-crystal growth in the Czochralski process. In the optimization problem, we seek an optimal solution in the sense that the index of crystalline defects is minimized while the single-crystal growth rate is maximiz
Oscillatory flow present in the melt during InSb single crystal growth using an RF-heating Czochralski method has been numerically investigated by means of the finite difference method using the HSMAC algorithm. The thermal boundary conditions required for the numerical simulation model were obtaine