𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Numerical modelling of heat transfer in GaSb Czochralski crystal growth (CZ and LEC)

✍ Scribed by K. Böttcher; A. Krüger; B. Schleusener


Publisher
John Wiley and Sons
Year
1988
Tongue
English
Weight
801 KB
Volume
23
Category
Article
ISSN
0232-1300

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Numerical analysis of various heat input
✍ K. Böttcher; Dr. A. Krüger; B. Schleusener 📂 Article 📅 1989 🏛 John Wiley and Sons 🌐 English ⚖ 411 KB

By the hand of a stationary system-oriented model of t h c InP crystal growth (LEC) various regimes of heat input into the melt are demonstrated. They are compared by regarding their influence over the maximal temperature of the melt, the curvature of the crystallization front, and the temperature o

Two and three-dimensional numerical mode
✍ M. H. Tavakoli; H. Wilke 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 883 KB

## Abstract In this article we report on a set of two‐dimensional and three‐dimensional numerical calculations for three different oxide Czochralski configurations in order to compare the results of the electromagnetic fields and the heat generation distribution. Two configurations without and with

Numerical simulation of oscillatory flow
✍ Yasunori Okano; Nicholas Audet; Sadik Dost; Yasuhiro Hayakawa; Masashi Kumagawa 📂 Article 📅 1998 🏛 John Wiley and Sons 🌐 English ⚖ 162 KB 👁 2 views

Oscillatory flow present in the melt during InSb single crystal growth using an RF-heating Czochralski method has been numerically investigated by means of the finite difference method using the HSMAC algorithm. The thermal boundary conditions required for the numerical simulation model were obtaine

Numerical investigation of induction hea
✍ X. J. Chen; L. J. Liu; H. Tezuka; Y. Usuki; K. Kakimoto 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 249 KB 👁 2 views

## Abstract A global simulation model is applied for a silicon carbide growth system heated by induction coils. A finite‐volume method (FVM) and a global model are applied to solve the equations for electromagnetic field, conductive and radiative heat transfer. The growth rate is predicted by Hertz