✦ LIBER ✦

Novel Approaches for Metal-Semiconductor-Metal GaN UV Photodetectors

✍ Scribed by Palacios, T. ;Calle, F. ;Monroy, E. ;Omn�s, F.

Publisher: John Wiley and Sons
Year: 2002
Tongue: English
Weight: 124 KB
Volume: 194
Category: Article
ISSN: 0031-8965
DOI: 10.1002/1521-396x(200212)194:2<476::aid-pssa476>3.0.co;2-#

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Modeling of metal–semiconductor–metal ph

Modeling of metal–semiconductor–metal photodetector for spice

✍ Jianjun Gao; Baoxin Gao; Chunguang Liang 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 235 KB 👁 1 views

Resonant-Cavity-Enhanced UV Metal-Semico

Resonant-Cavity-Enhanced UV Metal-Semiconductor-Metal (MSM) Photodetectors Based on AlGaN System

✍ Kishino, K. ;Yonemaru, M. ;Kikuchi, A. ;Toyoura, Y. 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 94 KB 👁 1 views

Low Dark Current Schottky Metal-Semicond

Low Dark Current Schottky Metal-Semiconductor-Metal Photodetectors Fabricated on AlGaN Epitaxial Layers for Visible-Blind Ultraviolet Detection

✍ Lee, In-Hwan 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 149 KB 👁 1 views

Novel technique for estimating metal sem

Novel technique for estimating metal semiconductor field effect transitor parasitics

✍ Yaser A. Khalaf; Sedki M. Riad 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 233 KB

Nanometer-Thick Single-Crystal Hexagonal

Nanometer-Thick Single-Crystal Hexagonal Gd2O3 on GaN for Advanced Complementary Metal-Oxide-Semiconductor Technology

✍ Wen Hsin Chang; Chih Hsun Lee; Yao Chung Chang; Pen Chang; Mao Lin Huang; Yi Jun 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 396 KB 👁 2 views

Hexagonal-phase single-crystal Gd2 O3 is deposited on GaN in a molecular beam epitaxy system. The dielectric constant is about twice that of its cubic counterpart when deposited on InGaAs or Si. The capacitive effective thickness of 0.5 nm in hexagonal Gd2 O3 is perhaps the lowest on GaN-metal-oxide

ChemInform Abstract: Nanometer-Thick Sin

ChemInform Abstract: Nanometer-Thick Single-Crystal Hexagonal Gd2O3 on GaN for Advanced Complementary Metal-Oxide-Semiconductor Technology.

✍ Minghwei Hong; et al. et al. 📂 Article 📅 2010 🏛 John Wiley and Sons ⚖ 16 KB