Nanometer-Thick Single-Crystal Hexagonal Gd2O3 on GaN for Advanced Complementary Metal-Oxide-Semiconductor Technology
✍ Scribed by Wen Hsin Chang; Chih Hsun Lee; Yao Chung Chang; Pen Chang; Mao Lin Huang; Yi Jun Lee; Chia-Hung Hsu; J. Minghuang Hong; Chiung Chi Tsai; J. Raynien Kwo; Minghwei Hong
- Publisher
- John Wiley and Sons
- Year
- 2009
- Tongue
- English
- Weight
- 396 KB
- Volume
- 21
- Category
- Article
- ISSN
- 0935-9648
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✦ Synopsis
Hexagonal-phase single-crystal Gd2 O3 is deposited on GaN in a molecular beam epitaxy system. The dielectric constant is about twice that of its cubic counterpart when deposited on InGaAs or Si. The capacitive effective thickness of 0.5 nm in hexagonal Gd2 O3 is perhaps the lowest on GaN-metal-oxide-semiconductor devices. The heterostructure is thermo dynamically stable at high temperatures and exhibits low interfacial densities of states after high-temperature annealing.