Nanometer-Thick Single-Crystal Hexagonal
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Wen Hsin Chang; Chih Hsun Lee; Yao Chung Chang; Pen Chang; Mao Lin Huang; Yi Jun
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Article
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2009
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John Wiley and Sons
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English
โ 396 KB
๐ 2 views
Hexagonal-phase single-crystal Gd2 O3 is deposited on GaN in a molecular beam epitaxy system. The dielectric constant is about twice that of its cubic counterpart when deposited on InGaAs or Si. The capacitive effective thickness of 0.5โnm in hexagonal Gd2 O3 is perhaps the lowest on GaN-metal-oxide