𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Nonstationary phenomena in Si MOSFETs in the quantum hall effects regime

✍ Scribed by V M Pudalov; S G Semenchinsky; V S Edel’man

Book ID
112975023
Publisher
Springer-Verlag
Year
1987
Tongue
English
Weight
67 KB
Volume
28
Category
Article
ISSN
0304-4289

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Disorder-induced features of the transve
Disorder-induced features of the transverse resistance in a Si-MOSFET in the quantum Hall effect regime
✍ I. Shlimak; K.-J. Friedland; V. Ginodman; S.V. Kravchenko 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 297 KB

## Abstract We investigate two features of the transverse resistance __R~xy~__ in a Si‐MOSFET in the quantum Hall effect regime. The first, the “overshoot” phenomenon, is observed at filling factor ν = 3. In this case, when the magnetic field increases and the filling factor ν approaches ν = 3, __R

Low electron densities and spin dependen
Low electron densities and spin dependent scattering in the quantum Hall regime in Si-MOSFETs
✍ R. Heemskerk; S.L. Wang; T.M. Klapwijk 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 124 KB

The relaxation of edge channels in the quantum Hall regime is considerably different in Si-MOSFETs than in GaAs/A1GaAs heterostructures due to the different material properties. These differences are also of great importance at low carrier densities (10 is m'2), where an isulating state occurs. Both