Nonohmic behaviour of tellurium with intrinsic and near-intrinsic carrier concentration

✍ Scribed by W. Liederer; H. Kuzmany

• Book ID: 104166940
• Publisher: Elsevier Science
• Year: 1973
• Tongue: English
• Weight: 300 KB
• Volume: 13
• Category: Article
• ISSN: 0038-1098
• DOI: 10.1016/s0038-1098(73)80018-3

✦ Synopsis

Investigations of the nonohmic behaviour of intrinsic and near-intrinsic tellurium were performed by voltage probe measurements, double pulse experiments and measurements with T-shaped samples. It is shown, that the nonohmic behaviour for T> 180 K is not due to acoustoelectric amplification but is caused by a depletion layer of electrons near the cathode. The development of the depletion layer is explained by a blocking contact for electrons at the cathode contact.