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Calculation of the intrinsic carrier concentration in InAs1-x-xSb

✍ Scribed by Z. Orman; A. Rogalski


Publisher
John Wiley and Sons
Year
1986
Tongue
English
Weight
172 KB
Volume
135
Category
Article
ISSN
0370-1972

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In this paper, the effective densities of states for the conduction and valence bands, Nc and N,, the intrinsic carrier concentration ni and the ionized doping concentration in strained Si,\_,Ge, layers grown on (001) Si substrates are analytically calculated, and their temperature and Ge fraction d