Nonballistic Spin-Field-Effect Transistor
β Scribed by Schliemann, John; Egues, J.; Loss, Daniel
- Book ID
- 111877757
- Publisher
- The American Physical Society
- Year
- 2003
- Tongue
- English
- Weight
- 115 KB
- Volume
- 90
- Category
- Article
- ISSN
- 0031-9007
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
We propose a study of the spin ΓΏeld e ect transistor (spin-FET), as a structure for the investigation of the physics of spin polarized transport in ferromagnet=semiconductor structures and as a device for fast electronics. From Monte Carlo simulation of spin-polarized transport in the channel of thi
## Abstract In order to combine the merits of the rapidly developing fields of spintronics and organic electronics, we present a concept of an organic fieldβeffect transistor (OFET) for spinβpolarized transport, enabling a nonβvolatile activation and deactivation by magnetic field pulses. This new