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Conductance properties in spin field-effect transistors

✍ Scribed by J. Yang; C. Lei; C. Rong; K. M. Jiang

Book ID
111622592
Publisher
Springer
Year
2008
Tongue
English
Weight
244 KB
Volume
62
Category
Article
ISSN
1434-6036

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## Abstract In order to combine the merits of the rapidly developing fields of spintronics and organic electronics, we present a concept of an organic field‐effect transistor (OFET) for spin‐polarized transport, enabling a non‐volatile activation and deactivation by magnetic field pulses. This new