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Theoretical and experimental considerations on the spin field effect transistor

✍ Scribed by A Bournel; V Delmouly; P Dollfus; G Tremblay; P Hesto

Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
97 KB
Volume
10
Category
Article
ISSN
1386-9477

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✦ Synopsis

We propose a study of the spin ΓΏeld e ect transistor (spin-FET), as a structure for the investigation of the physics of spin polarized transport in ferromagnet=semiconductor structures and as a device for fast electronics. From Monte Carlo simulation of spin-polarized transport in the channel of this device, we develop in a ΓΏrst part theoretical considerations about the scaling of the spin-FET. In particular, we point out that the magnetization of the ferromagnetic source contact has to be perpendicular to ferromagnet=semiconductor interface. In a second part, we present a study of the magnetic properties of ultrathin Co layers deposited on GaAs with the aim of obtaining a perpendicular magnetization.

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