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Non-Rutherford backscattering studies of SiC/SIMOX structures

✍ Scribed by K.W. Chen; Y.H. Yu; Y.M. Lei; L.L. Cheng; B. Sundaraval; E.Z. Luo; S.P. Wong; I.H. Wilson; L.Z. Chen; C.X. Ren; S.C. Zou

Book ID
108417529
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
266 KB
Volume
184
Category
Article
ISSN
0169-4332

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Single-crystal 6H-SiC (a-SiC) wafers were irradiated with He', C' and Si' ions to Γ‘uences ranging from 7.5 Γ‚ 1017 to 1 Γ‚ 1020 ions m-2 at various temperatures (160-870 K). Damage accumulation and subsequent defect annealing (up to 1170 K) have been studied using in situ 2.0 MeV He' Rutherford backsc