𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Non-parabolic hydrodynamic formulations for the simulation of inhomogeneous semiconductor devices

✍ Scribed by A.W. Smith; K.F. Brennan

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
904 KB
Volume
39
Category
Article
ISSN
0038-1101

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Non-parabolic band hydrodynamical model
Non-parabolic band hydrodynamical model of silicon semiconductors and simulation of electron devices
✍ Vittorio Romano πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 341 KB

## Abstract A consistent hydrodynamical model for electron transport in silicon semiconductors, free of any fitting parameter, has been formulated in Anile and Romano (__Continuum Mechanics Thermodynamics__ 1999; **11**:307–325) and Romano (__Continuum Mechanics Thermodynamics__ 1999; **12**:31–51)

An efficient preconditioning technique f
An efficient preconditioning technique for numerical simulation of hydrodynamic model semiconductor devices
✍ Geng Yang; Shaodi Wang; Ruchuan Wang πŸ“‚ Article πŸ“… 2003 πŸ› John Wiley and Sons 🌐 English βš– 192 KB

## Abstract We investigate the application of preconditioned generalized minimal residual (GMRES) algorithm to the equations of hydrodynamic model of semiconductor devices. An introduction to such a model is presented. We use finite‐element method __P__~1~‐__isoP__~2~ element to discretize the equa

New one- and two-dimensional algorithms
New one- and two-dimensional algorithms for the transient simulation of semiconductor devices
✍ M. S. Towers; A. McCowen πŸ“‚ Article πŸ“… 1988 πŸ› John Wiley and Sons 🌐 English βš– 551 KB

One-and two-dimensional algorithms for the transient simulation of semiconductor devices are presented which incorporate a solenoidal total current. The paper includes results from one-dimensional simulation of a p-n junction, including forward-to-reverse bias switching and also switch-on into high