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New one- and two-dimensional algorithms for the transient simulation of semiconductor devices

✍ Scribed by M. S. Towers; A. McCowen

Publisher
John Wiley and Sons
Year
1988
Tongue
English
Weight
551 KB
Volume
1
Category
Article
ISSN
0894-3370

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✦ Synopsis

One-and two-dimensional algorithms for the transient simulation of semiconductor devices are presented which incorporate a solenoidal total current. The paper includes results from one-dimensional simulation of a p-n junction, including forward-to-reverse bias switching and also switch-on into high injection in an asymmetric structure. A discretization scheme for the two-dimensional formulation is described with details on handling voltage driven terminals and the associated boundary conditions.

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