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Use of the two-dimensional TLM method in the electromagnetic simulation of thin semiconductor samples

✍ Scribed by Salam F. Dindo; Michel M. Ney; Robert G. Harrison

Publisher
John Wiley and Sons
Year
1995
Tongue
English
Weight
955 KB
Volume
8
Category
Article
ISSN
0894-3370

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✦ Synopsis

A two-dimensional lossy shunt TLM node is incorporated into a TLM system and adapted to model for the first time the Maxwell field equations in thin semiconductor samples. Both the characteristics of the node and the TLM system itself are fully described. By considering a parallel-plate structure containing a thin GaAs sample, driven by a voltage source, it is shown, with an example, that this TLM technique can simulate the response of non-stationary electromagnetic fields in a semiconductor to applied excitations.

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