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Non-homogeneous electrical transport through silicon-on-sapphire thin films: evidence of the internal stress influence: John-Hyun Lee, Sorin Cristoloveanu and Alain Chovet Solid-St. Electron. 25 (9), 947 (1982)


Book ID
104157163
Publisher
Elsevier Science
Year
1984
Tongue
English
Weight
192 KB
Volume
15
Category
Article
ISSN
0026-2692

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โœฆ Synopsis


regular production line which contained two resistorone with ~ (t/w)> 1 where an L cut/Vernier cut combination was used for trimming and the other with AR < 1 where a P cut/Vernier cut combination was used. The post trim resistors' performance was studied under two ~onditions -one at room temperature and the other after baking at 150~ for I00 hr and then maintained at room temperature. These studies lead to the conclusion that for high precision resistors the resistors should be so designed that the L cut/Vernier cut combination can be adopted for trimming. Secondly the trimmed resistor should be stored at 150~ for a period of I00 hr to make the post trim behaviour more predictable and also to achieve better yield.

On discrete hazard functions

A. A. SALVIA and R. C. BOLLINGER IEEE Trans. Reliab. R-31 (5), 458 (1982) This paper describes basic results about digcrete hazard functions. Several of these results have parallels in the continuous case. Two theorems in section three are presented. The first provides a basis for selecting hazard functions; the cumulative hazard must become infinite. The second describes the limiting behaviour of residual lifetime. Several open questions are posed in section four.


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